Product List
(Total 189 Products )
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Min. Order: 100 pcs
- Application: IC, Discrete, Detector, Solar Cell, Electronic
- Type: N / P Type Semiconductor
- Diameter: 50.8+/-0.5mm, 76.2+/-0.5mm, 100+/-0.5mm, 154+/-0.5
- Ingot Shape: Quasi-Squared or Cylinder
- Ingot Length: 180mm Min
- Crystal Orientation: <100>, <111>+/-1degree
Min. Order: 500 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <111> +/-1degree
- Resistivity: 10-150 Ohm.Cm
- RRV: 20%25% Max
- Thickness: 325, 375, 425, 525, 625, 1, 000um
Min. Order: 1 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110> <111>+/-1degree
- Resistivity: 0.001-100 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
Min. Order: 1 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110> <111>+/-1degree
- Resistivity: 0.001-100 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
Min. Order: 1 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110> <111>+/-1degree
- Resistivity: 0.001-100 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
FOB Price: US $15-30 / pcs
Min. Order: 500 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110> +/-1degree
- Resistivity: 0.003-80 Ohm.Cm
- Rrv: 8% 10% 12%Max
- Thickness: 180-1, 000um
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
FOB Price: US $15-30 / pcs
Min. Order: 500 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110> +/-1degree
- Resistivity: 0.003-80 Ohm.Cm
- Rrv: 8% 10% 12%Max
- Thickness: 180-1, 000um
FOB Price: US $1-100 / Piece
Min. Order: 1 Piece
- Growth Method: VGF
- Crystal Orientation: <100>+/-0.5degree or +/-2.0degree
- Orientation / Identification Flat Option: EJ, US or Notch
- Resistivity: 1e7 Ohm.Cm Min, or (1-30)E7 Ohm.Cm
- Hall Mobility: 5, 000 Cm2/V.S Min
- Type: Intrinsic Semiconductor
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
FOB Price: US $1-100 / Piece
Min. Order: 1 Piece
- Growth Method: VGF
- Crystal Orientation: <100>+/-0.5degree or +/-2.0degree
- Orientation / Identification Flat Option: EJ, US or Notch
- Resistivity: 1e7 Ohm.Cm Min, or (1-30)E7 Ohm.Cm
- Hall Mobility: 5, 000 Cm2/V.S Min
- Type: Intrinsic Semiconductor
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
FOB Price: US $1-100 / Piece
Min. Order: 1 Piece
- Growth Method: VGF
- Crystal Orientation: <100>+/-0.5degree or +/-2.0degree
- Orientation / Identification Flat Option: EJ, US or Notch
- Resistivity: 1e7 Ohm.Cm Min, or (1-30)E7 Ohm.Cm
- Hall Mobility: 5, 000 Cm2/V.S Min
- Type: Intrinsic Semiconductor
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
FOB Price: US $1-100 / Piece
Min. Order: 1 Piece
- Growth Method: VGF
- Crystal Orientation: <100>+/-0.5degree or +/-2.0degree
- Orientation / Identification Flat Option: EJ, US or Notch
- Resistivity: 1e7 Ohm.Cm Min, or (1-30)E7 Ohm.Cm
- Hall Mobility: 5, 000 Cm2/V.S Min
- Type: Intrinsic Semiconductor
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
Min. Order: 200 pcs
- Diameter: 50.8+/-0.2mm, 76.2+/-0.3mm, 100+/-0.5mm
- Growth Method: VGF
- Thickness: 220-350+/-20um
- Crystal Orientation: <100>+/-0.5degree
- Orientation Flat / Length: 16+/-1, 22+/-1 or 32+/-1 mm
- Identification Flat / Length: 8+/-1, 11+/-1 or 18+/-2 mm
FOB Price: US $1-100 / Piece
Min. Order: 1 Piece
- Growth Method: VGF
- Crystal Orientation: <100>+/-0.5degree or +/-2.0degree
- Orientation / Identification Flat Option: EJ, US or Notch
- Resistivity: 1e7 Ohm.Cm Min, or (1-30)E7 Ohm.Cm
- Hall Mobility: 5, 000 Cm2/V.S Min
- Type: Intrinsic Semiconductor
Min. Order: 200 pcs
- Diameter: 50.8+/-0.2mm, 76.2+/-0.3mm, 100+/-0.5mm
- Growth Method: VGF
- Thickness: 220-350+/-20um
- Crystal Orientation: <100>+/-0.5degree
- Orientation Flat / Length: 16+/-1, 22+/-1 or 32+/-1 mm
- Identification Flat / Length: 8+/-1, 11+/-1 or 18+/-2 mm
FOB Price: US $1-1,000 / kg
Min. Order: 1 kg
- Resistivity: 0.003-0.3 Ohm.Cm
- Hall Mobility: 100 Cm2/V.S Min
- Type: Intrinsic Semiconductor
- Application: LED
- Material: Gallium Phosphide
- Brand: WMC
Min. Order: 200 pcs
- Diameter: 50.8+/-0.2mm, 76.2+/-0.3mm, 100+/-0.5mm
- Growth Method: VGF
- Thickness: 220-350+/-20um
- Crystal Orientation: <100>+/-0.5degree
- Orientation Flat / Length: 16+/-1, 22+/-1 or 32+/-1 mm
- Identification Flat / Length: 8+/-1, 11+/-1 or 18+/-2 mm