Product List
(Total 189 Products )
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Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
FOB Price: US $1 / kg
Min. Order: 1 kg
- Growth Method: LEC
- Conductivity Type: N/P
- Crystal Orientation: <100> <111> +/-2.0 Degree
- Type: Intrinsic Semiconductor
- Application: Optical Maser Device, Detector Device
- Material: Indium Arsenide
Min. Order: 500 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <111> +/-2degree
- Resistivity: 15-600, 800-1, 200 Ohm.Cm
- RRV: 6%8%10%12% Max
- Thickness: 325, 375, 425, 525, 625, 1, 000um
FOB Price: US $1-100 / Piece
Min. Order: 1 Piece
- Growth Method: VGF
- Crystal Orientation: <100>+/-0.5degree or +/-2.0degree
- Orientation / Identification Flat Option: EJ, US or Notch
- Resistivity: 1e7 Ohm.Cm Min, or (1-30)E7 Ohm.Cm
- Hall Mobility: 5, 000 Cm2/V.S Min
- Type: Intrinsic Semiconductor
Min. Order: 500 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110>+/-1degree
- Resistivity: 0.003-80 Ohm.cm
- RRV: 8% 10% 12% max
- Thickness: 180-1, 000 um
FOB Price: US $14-17 / Piece
Min. Order: 500 Pieces
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110> <111>
- Resistivity: 0.003-1000 ohm.Cm
- RRV: 8% 10% 12%Max
Min. Order: 500 pcs
- Diameter: 50.8+/-0.2mm
- Growth Method: Vgf
- Thickness: 300+/-20um
- Crystal Orientation: <111>+/-0.5degree
- Orientation Flat / Length: 16+/-1, 22+/-1 or 32+/-1 mm
- Identification Flat / Length: 8+/-1, 11+/-1 or 18+/-2 mm
Min. Order: 500 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110>+/-1degree
- Resistivity: 0.003-80 Ohm.cm
- RRV: 8% 10% 12% max
- Thickness: 180-1, 000 um
FOB Price: US $14-17 / Piece
Min. Order: 500 Pieces
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110> <111>+/-1degree
- Resistivity: 0.001-100 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
Min. Order: 500 pcs
- Diameter: 76.2+/-0.2, 100+/-0.2 mm
- Growth Method: Lec
- Thickness: 625, 1, 000 +/-25 Um
- Crystal Orientation: <111> <100> +/-0.5 Degree
- Hall Mobility: 2, 000 Cm2/V.S Min
- Resistivity: 0.003-0.3 Ohm.Cm
Min. Order: 200 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110>+/-1degree
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
FOB Price: US $14-17 / Piece
Min. Order: 500 Pieces
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110> <111>+/-1degree
- Resistivity: 0.001-100 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
Min. Order: 200 pcs
- Diameter: 50.8+/- 0.2, 76.2+/- 0.2 mm
- Growth Method: Lec
- Thickness: 200-2, 000+/-5 or +/-10 Um
- Crystal Orientation: <100> <111>
- Front / Backside Finish: as-Cut, L/L, P/P, P/E
- Type: Intrinsic Semiconductor
Min. Order: 200 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110>+/-1degree
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
FOB Price: US $14-17 / Piece
Min. Order: 500 Pieces
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110> <111>+/-1degree
- Resistivity: 0.001-100 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
FOB Price: US $1 / kg
Min. Order: 1 kg
- Growth Method: LEC
- Conductivity Type: N/P
- Crystal Orientation: <100> <111> +/-2.0 Degree
- Type: Intrinsic Semiconductor
- Application: Optical Maser Device, Detector Device
- Material: Indium Arsenide
Min. Order: 200 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110>+/-1degree
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
Min. Order: 200 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110>+/-1degree
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
Min. Order: 200 pcs
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Crystal Orientation: <100> <110>+/-1degree
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
- Thickness: 180-1, 000um
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max
Min. Order: 1 Piece
- Application: IC, Diode, Episubstrate, LED, Transistor, Discrete
- Type: N/P Type Semiconductor
- Conductivity: N Type or P Type
- Crystal Orientation: <100> <110>+/-1°
- Resistivity: 0.003-80 Ohm.Cm
- RRV: 8% 10% 12%Max